FOR 476:  Silicon Carbide as Semiconductor Material: Alternative Approaches towards Crystal Growth and Doping

• Subject Area: Physics ; Computer Science, Systems and Electrical Engineering
• Term: from 2002 to 2008
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 5469528

No abstract available

• DFG Programme: Research Units

Projects

• Alternative ways in the SiC-sublimation growth and co-doping with donors (Applicant Pensl, Gerhard )
• Characterisation of structural defects in SiC by x-ray diffraction (Applicant Magerl, Andreas )
• Characterization of SiC-crystal growth by micro-Raman spectroscopy (Applicant Hundhausen, Martin )
• Crystal growth of SiC using a modified PVT setup (Applicant Wellmann, Peter )
• Defect and interfacial characterization of SiC wafers, structures and devices based on electron microscope techniques (Applicant Christiansen, Silke )
• Doping and aggregation of vacancies / Graphite inclusions and overlayers (Applicant Pankratov, Oleg )
• Herstellung von polytypreinen defektarmen SiC-Volumenkristallen aus der flüssigen Phase (Applicant Hofmann, Dieter )
• In-situ x-ray measurements of defect generation and crystalline quality during PVT growth, cool down and post-growth annealing of SiC (Applicant Hock, Rainer )
• Silicon carbide (SiC) as semiconductor material: Alternative approaches towards crystal growth and doping (Applicant Ley, Lothar )
• Untersuchung von p-dotierten Schichten zur Bauelementeisolation (Applicant Frey, Lothar )

• Spokesperson: Professor Dr. Lothar Ley