Coherent spin transport in semiconductors

• Antragsteller: Dr. Bernd Beschoten
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2007 bis 2015
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 40956248

Within the previous funding period, we have shown that spin dephasing times of donor electrons in unintentionally doped ZnO epilayers can exceed 30 ns. For the next funding period, we propose to explore whether the magnetic exchange interaction between neighbouring donor spins from different donor atoms can be manipulated by optical means. Furthermore, we propose to extend our previous experiments on electrical spin injection into ZnO towards the time-domain using an electrical pump/- optical probe scheme to unveil phase information of the injected electron spins. In a second focus, we propose to extend our spin injection and transport studies to Si-based nanostructures. We will use a non-local spin valve geomatry for spin injection and detection in Si using ferromagnetic electrodes and Al2O3 as injection barrier. For time-resolved all-electrical studies, we will exploit a novel electrical pump probe experiment, which shall be used for phase sensitive detection of coherent spin currents.

• DFG-Verfahren: Schwerpunktprogramme
• Teilprojekt zu: SPP 1285: Halbleiter-Spintronik
• Beteiligte Person: Professor Dr. Gernot Güntherodt