Coherent spin transport in semiconductors

• Applicant: Dr. Bernd Beschoten
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2007 to 2015
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 40956248

Within the previous funding period, we have shown that spin dephasing times of donor electrons in unintentionally doped ZnO epilayers can exceed 30 ns. For the next funding period, we propose to explore whether the magnetic exchange interaction between neighbouring donor spins from different donor atoms can be manipulated by optical means. Furthermore, we propose to extend our previous experiments on electrical spin injection into ZnO towards the time-domain using an electrical pump/- optical probe scheme to unveil phase information of the injected electron spins. In a second focus, we propose to extend our spin injection and transport studies to Si-based nanostructures. We will use a non-local spin valve geomatry for spin injection and detection in Si using ferromagnetic electrodes and Al2O3 as injection barrier. For time-resolved all-electrical studies, we will exploit a novel electrical pump probe experiment, which shall be used for phase sensitive detection of coherent spin currents.

• DFG Programme: Priority Programmes
• Subproject of: SPP 1285: Semiconductor Spintronics
• Participating Person: Professor Dr. Gernot Güntherodt