Project Details
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coordination project

Subject Area Experimental Condensed Matter Physics
Term from 2008 to 2021
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 48042628
 
Final Report Year 2010

Final Report Abstract

No abstract available

Publications

  • “Growth of Inx Ga1−x N/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE,” J. Crystal Growth 310, 4987 (2008)
    H. Jönen, U. Rossow, T. Langer, A. Dräger, L. Hoffmann, H. Bremers, A. Hangleiter, F. Bertram, S. Metzner and J. Christen
  • “MOVPE Growth and Characterization of AlInN FET Structures on Si(111),” Materials Research Society Symposium Proceedings 1068, 45 (2008)
    C. Hums, A. Gadanecz, A. Dadgar, J. Bläsing, H. Witte, T. Hempel, A. Dietz, P. Lorenz, S. Krischok, J. A. Schaefer, J. Christen and A. Krost
  • “AlInN/GaN based multi quantum well structures – growth and optical properties,” phys. stat. sol. C 6, S451 (2009)
    C. Hums, A. Gadanecz, A. Dadgar, J. Bläsing, P. Lorenz, S. Krischok, F. Bertram, A. Franke, J. A. Schaefer, J. Christen, and A. Krost
  • “Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes”, Phys. Rev. B 80, 115320 (2009)
    W. G. Scheibenzuber, U. T. Schwarz, R. G. Veprek, B. Witzigmann, and A. Hangleiter
  • “GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets,” MRS Bulletin 34, 328–333 (2009)
    F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, and K. Thonke
  • “Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains,” Appl. Phys. Lett. 96, 172102-1–3 (2010)
    B. Bastek, O. August, J. Christen, M. Wieneke, A. Dadgar, J. Blasing, A. Krost, and U. Wendt
  • “Optical anisotropy in semipolar (Al,In)GaN laser waveguides,” phys. stat. sol. C 1–3 (2010)
    W. Scheibenzuber, U. Schwarz, R. Veprek, B. Witzigmann, and A. Hangleiter
    (See online at https://doi.org/10.1002/pssc.200983646)
  • “Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN,” phys. stat. sol. (RRL) 4, 1–3 (2010)
    J. Raß T. Wernicke, W. G. Scheibenzuber, U. T. Schwarz, J. Kupec, B. Witzigmann, P. Vogt, S. Einfeldt, M. Weyers, and M. Kneissl
    (See online at https://doi.org/10.1002/pssr.200903325)
 
 

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