SPP 2312:  Energy Efficient Power Electronics "GaNius"

• Subject Area: Computer Science, Systems and Electrical Engineering
• Term: since 2021
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 441885089

No abstract available

• DFG Programme: Priority Programmes
• International Connection: Italy

Projects

• Aluminum Nitride for vertical Power Electronics (Applicants Waag, Andreas ;  Witzigmann, Bernd )
• Bidirectional-GaN-based Soft-switched Current Source Converters (Applicant Lobo Heldwein, Marcelo )
• Characterization and Application of GaN-HEMTs at Cryogenic Temperatures (Applicant Hiller, Marc )
• Conformal 3D Ceramic-Based Intelligent GaN Power Systems-in-Package (3D-CeraGaN) (Applicants Kallfass, Ingmar ;  Zimmermann, André )
• Coordination Funds (Applicant Dieckerhoff, Sibylle )
• Determining the Temperature of GaN based power semiconductors based on Temperature Sensitive Parameters (TSEP) (Applicant Bakran, Mark-Matthias )
• Electronic transport of polarization-induced, two-dimensional electron gases with extremely high sheet carrier density for ScAlN/GaN-based power devices (ScNius) (Applicants Ambacher, Oliver ;  Heitmann, Johannes )
• Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN) (Applicants Lindemann, Andreas ;  Mallwitz, Regine )
• GaN-Enabled Three-Phase PFC-Rectifier Family in CCM-Boost Mode Employing Only Two HF-Switches and Inductors for Low Common Mode and Simplified Power Architectures (Applicant Schafmeister, Frank )
• GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf) (Applicants Grabmaier, Anton ;  Pfost, Martin )
• High Frequency Switching Power Converters based on AlN-based Power Transistors (Applicants Dieckerhoff, Sibylle ;  Hilt, Oliver ;  Wentzel, Andreas )
• Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification (Applicants Kallfass, Ingmar ;  März, Martin )
• Modelling and characterization of GaN-HEMT devices with respect to effects of charge carrier trapping (Applicants Hiller, Marc ;  Sack, Martin )
• Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic Systems (Applicants Dieckerhoff, Sibylle ;  Pfost, Martin )
• Performance Evaluation of Soft-and Hard-Switched Inverters Based on Monolithically-Integrated Bidirectional GaN Devices (Applicant Liserre, Ph.D., Marco )
• Planar and Vertical Junctions for innovative GaN-Based High-Power Devices (Applicants Christen, Jürgen ;  Vescan, Andrei )
• ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics (Applicants Basler, Thomas ;  Friebe, Jens )
• Toward chip-scale Off-line Power supplies in GaN: Advancing monolithic GaN analog and mixed signal circuit design for high-efficiency and highly integrated power-factor correction (PFC) converters (Applicant Wicht, Bernhard )
• Transition metal-nitride-AlGaN layers for electronic applications by sputtering epitax (Applicants Dadgar, Armin ;  Feneberg, Martin )

• Spokesperson: Professorin Dr.-Ing. Sibylle Dieckerhoff