Untersuchungen zu semipolaren GaInN-Quantenfilmen auf strukturierten Oberflächen für Anwendungen in Laserdioden
Zusammenfassung der Projektergebnisse
In conclusion, we have demonstrated that by the use of selective area epitaxy 3D GaN structures can be grown on full 2 inch wafers. Introducing inverse GaN pyramids we could demonstrate excellent material quality featuring (nearly) defect free semipolar surfaces. The gradient in thickness and composition of the InGaN QWs deposited on the facets could be precisely described by gas phase diffusion during the MOVPE growth. Different investigation methods proved the drastically reduced piezoelectric polarization on our facet quantum wells. Electrically driven LED test structures in the blue and blue/green spectral region showed reasonable output characteristics. Furthermore, selective area epitaxy was achieved on a submicrometer scale, enabling the embedding of the semipolar QWs, highly facilitating further device processing. Based on this approach the 3D InGaN/GaN structures were combined with a conventional laser design, which potentially may allow the operation as a semipolar, complex coupled distributed feedback laser. The latter work is ongoing within a follow-up project.
Projektbezogene Publikationen (Auswahl)
- “GaInN-based LED structures on selectively grown semi-polar crystal facets”, phys. status solidi (a), vol. 207, pp. 1407–1413, 2010
F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen
- “Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates”, J. Appl. Phys., vol. 107, pp. 103517-1–6, 2010
M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, and F. Scholz
- “Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates”, phys. status solidi (c), vol. 7, pp. 2140–2143, 2010
T. Wunderer, J. Wang, F. Lipski, S. Schwaiger, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, S.S. Shirokov, A.E. Yunovich, and F. Scholz
- “I2 basal plane stacking fault in GaN: origin of the 3.32 eV luminescence band”, Phys. Rev. B, vol. 83, pp. 035314-1–6, 2011
I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen
- “Rosige Aussichten für grünes Licht”, Physik Journal, vol. 10, pp. 21–26, 2011
U.T. Schwarz and F. Scholz
- “Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on {1122} and {1011} pyramid facets”, Phys. Status Solidi B, vol. 248, pp. 632–637, 2011
S. Metzner, F. Bertram, C. Karbaum, T. Hempel, T. Wunderer, S. Schwaiger, F. Lipski, F. Scholz, C. Wächter, M. Jetter, P. Michler, and J. Christen
- “Three-dimensional GaN for semipolar light emitters”, Phys. Status Solidi B, vol. 248, pp. 549–560, 2011
T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G.J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, A.D. Dräger, A. Hangleiter, and F. Scholz
