Printed organic field-effect transistors with high gate capacitance

• Applicant: Dr.-Ing. Georg Schmidt
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2013 to 2014
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 252745734

The project Printed organic field-effect transistors with high gate capacitance is part of the research areas Organic Electronics and in particular Printed Electronics. These highly linked research areas have got great attention during the last years because of their general ability to realize a big variety of different and flexible electronic products (e. g. organic light emitting diodes, organic solar cells, organic circuits) at low price by means of printing technologies.Concrete, the research project is devoted to the investigation and development of specific printed dielectrics with the aim of realizing a maximized gate capacitance of field-effect transistors. By now, most fully mass printed organic field-effect transistors have very low gate capacitance leading to a high supply voltage which is necessary to drive the transistors. To solve this problem a polymeric double-layer approach consisting of a low-k- and a high-k-dielectric will be used in the project offering a ten-time higher capacitance in comparison to a single-layer low-k-only system while keeping the dielectric thickness constant.

• DFG Programme: Research Fellowships
• International Connection: Finland
• Host: Henrik Sandberg, Ph.D.