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Highest-Linearity Nyquist Rate SAR ADCs in nm-CMOS - NanoSAR

Subject Area Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term from 2014 to 2021
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 245868713
 
Final Report Year 2021

Final Report Abstract

This project was the continuation of a previously very successfully conducted project, where our group could propose and prominently publish the combination of a power efficient SAR ADC with an incremental sigma-delta DAC, which realized an extended linearity in a high perfor- mance SAR. The continuation of the project was intended to find ways to speed up the operation, to find alternative ways to realize the I-SD DAC, and to analyze further high resolution, low noise, comparators. We could contribute publications on the topic of a new SMASH I-SD DAC, the input re- ferred noise of VCO based comparators, and the input referred noise of SAR ADC. Also, a prototype of a new SAR architecture based on a split C-DAC and based on pure I-SD DAC calibration could be realized in a 40nm CMOS technology. The chip is currently under measurement. It is operable, but not yet with full simulated specification. We hope to finalize the project after submission of this report with a successful measurement and a circuit based publication.

Publications

 
 

Additional Information

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