Detailseite
Projekt
Ge/Si quantum dots in the sub 20nm regime - exact positioning and electrical functionalisation
Antragsteller
Professor Dr. Harald Giessen; Professor Dr. Oliver G. Schmidt; Professor Dr.-Ing. Jörg Schulze; Dr. Ralf Vogelgesang
Fachliche Zuordnung
Experimentelle Physik der kondensierten Materie
Förderung
Förderung von 2006 bis 2013
Projektkennung
Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 21644817
The goal of this project is to implement SiGe/Si devices on single positioned quantum dots, to test the electrical functions in competition to more classical approaches, and to fabricate the structures as part of integrated mm-wave circuits. Silicon-based systems are of high importance in microelectronics, but additionally this material system can be considered as a model system for strain adjustment and band alignment in indirect semiconductor couples. The devices and circuits proposed include mm-wave rectifying antenna, oscillators, interband tunneling diodes and strained channel field effect transistors (FET). The concept of DotFET s where the strain field is created by the Ge dot needs strongly positioned islands to be feasible. The positioning is driven by the self-assembled growth of Ge islands on pre-patterned surfaces and by the adjustment of proper strain distribution around the islands with so-called virtual substrates.
DFG-Verfahren
Forschungsgruppen
Beteiligte Person
Professor Dr. Klaus Kern
