Tailoring 2d transition metal dichalcogenides for electronic applications

• Antragsteller: Professor Dr. Thomas Heine
• Mitantragsteller: Professor Dr. Andras Kis
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2012 bis 2016
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 211502237

Consumer electronic devices are getting smaller but also hotter as the semiconductor industry rapidly approaches the performance limits of current silicon-based CMOS technology. Short-channel effects and gate leakage increase levels of heat dissipation as transistors are miniaturized. Possible long-term solutions to this problem involve replacing silicon with another material that would perform better at smaller scales. Such a replacement may also enable new functionalities for electronic devices, such as flexible electronics. This proposal aims to open the way to fabricate electronic circuits based on twodimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues of graphene. It has been recently shown that single layers of MoS2 exhibit electrical properties, notably field-effect transistor characteristics, comparable to thin silicon and that it can be processed on a large-scale using solution-based exfoliation. Preliminary experimental work carried out by one of the applicants indicates that the substrate, dielectric environment and contact type play a critical role in achieving high levels of electrical performance. In order to enable rational design of future electronic devices, we propose here to combine experimental work with theoretical studies and find the optimal substrate, dielectric environment and contact geometry for field-effect devices based on single-layer MoS2 and related materials. This will allow widespread research in the basic properties and practical applications of these new promising materials.

• DFG-Verfahren: Sachbeihilfen
• Internationaler Bezug: Schweiz