Detailseite
Projekt Druckansicht

Sub - 10 nm - Nanotransfer - Drucktechnik auf der Grundlage von MBE-Stempeln für neuartige Anwendungen in der organischen und molekularen Elektronik

Fachliche Zuordnung Elektronische Halbleiter, Bauelemente und Schaltungen, Integrierte Systeme, Sensorik, Theoretische Elektrotechnik
Experimentelle Physik der kondensierten Materie
Förderung Förderung von 2011 bis 2015
Projektkennung Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 192315742
 
Erstellungsjahr 2017

Zusammenfassung der Projektergebnisse

Within this project, important fundamental knowledge could be gained about use of nanoimprint and nanotransfer techniques for the realization of electronic devices. We have demonstrated that nanostructures of sizes down to few tens of nanometers can be successfully transferred on silicon substrates and can be the basis for a variety of novel devices. Metal electrodes can also be fabricated which extend the tools available in the field of organic and printed electronics. Thanks to the methodology developed in the project, electronic properties of certain organophosphonate monolayer systems on aluminum oxide surfaces could be studied extensively. These monolayers have proven to be versatile interface systems that shall be further exploited for nanoelectronic applications in future research. In particular, alkyl mono- and bisphosphonates (monoPAs and bisPAs, respectively) of different carbon chain length were deposited on aluminum oxide surfaces and their electronic characteristics were investigated. Bis-phosphonate monolayers showed an intriguing, non-trivial dependence of the film resistance as function of film thickness which may well become important for applications as gate dielectric or insulation layer. Bis-phosphonate monolayers were also found to be highly effective as functional adhesive interface for the direct printing of metal contacts onto solid surfaces. This is a major step towards further developing transistor structures based on such printed-electrode schemes. For any related monolayer fieldeffect transistor structure in addition, proper electronic function of the organic conductive thin film has to be demonstrated. Using a silicon-only nanogap device structure, functionalized with a monolayer of an anthracene-based organophosphonate, such first demonstration was successfully achieved. Using MBE-grown AlGaAs/GaAs heterostructures a completely new manufacturing process, involving new geometries and a dedicated printing setup was successfully developed. Large transferred thin-film metal areas in particular comprising long linear gaps with widths down to about 10 nm could be demonstrated. Here, a particular focus was understanding the intriguing influence of the various process parameters (metal material, gap etching chemistry, surface pre-treatment, atmosphere, pressure, time, temperature etc.) on the printing result. By carefully investigating the (partially) interdependent parameters optimal settings for best transfer yields could be obtained. Complex stamps, which comprised patterned gap regions by on-face lithography, were demonstrated, and CEO stamps for printing T-shaped patterns were successfully grown and characterized. Systematic transfer studies using these novel CEO structures will be carried out in future studies.

Projektbezogene Publikationen (Auswahl)

 
 

Zusatzinformationen

Textvergrößerung und Kontrastanpassung