Nasschemische Oberflächenfunktionalisierung von Halbleitern und Metalloxiden für den Einsatz in der Nanotechnologie
Zusammenfassung der Projektergebnisse
In this project, a case was made for functionalizing oxide-free Si surfaces. More emphasis was placed on direct substitution by methanol as a starting point because of the formation of a nanopatterned surface on atomically flat Si(111) surfaces. This interesting chemically patterned surface was shown to be easily functionalized, making it possible to explore surface chemistry in some detail. As an example, phosphonation of oxide-free surfaces with isolated OH groups was described both on the OH groups and after metal oxide modification of the OH groups with metal salts. It was shown in particular that the fundamentals of phosphonate adsorption could be unraveled by understanding and controlling the formation of mono-, bi- and tri-dentate adsorption. Finally, monolayer doping studies carried out on Si(111) surfaces show that we can perform both n- and p-dopant incorporation into Si, using simplephosphonic and arsonic acids. We anticipate that, with As, the dissociation occurs at lower temperature and shallower junctions can be achieved due to the lower diffusion rate of As compared to P.
Projektbezogene Publikationen (Auswahl)
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Activation of surface hydroxyl groups by modification of H-terminated Si(111) surfaces. J. Am. Chem. Soc., 2012, 134 (21), pp 8869–8874
Thissen, P., Peixoto, T., Longo, R.C., Peng, W., Cho, K., Schmidt, W.G. and Y.J. Chabal
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Controlled, Low-Coverage Metal Oxide Activation of Silicon for Organic Functionalization: Unraveling the Phosphonate Bond, Langmuir 2012, 28, 17494−17505
Thissen, P., Vega, A., Peixoto, T. and Y.J. Chabal
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Wet chemical surface functionalization of oxide-free silicon, Progress in Surface Science 87 (2012) 272–290
Thissen, P., Seitz, O. and Y.J. Chabal
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Monolayer doping via phosphonic acid grafting on silicon: Microscopic insight from IR spectroscopy and DFT calculations, Advanced Functional Materials 2013
Longo, R.C., Cho, K., Schmidt, W.G., Chabal, Y.J. and P. Thissen
