Züchtung und Untersuchung von Volumenkristallen und Epitaxieschichten von beta-Ga2O3, In2O3, SnO2 und ZnO

• Antragsteller: Professor Dr. Roberto Fornari; Professor Dr. Recardo Manzke
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2009 bis 2014
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 131358520

The exploration of oxides from the perspective of semiconductor science and technology offers great opportunities for uncovering new physics as well as developing novel devices with unprecedented performance and functionality. There is currently great interest in the exploration and development of semiconducting binary oxides (β-Ga2O3, In2O3, SnO2, ZnO) as new wideband- gap electronic materials. When grown as high purity epitaxial films with controlled doping, as carried out for non-oxide semiconductors (e.g., Si, GaAs), they have great potential as a new class of semiconductors (NSF-partner UCSB). In this context the proposed project addresses a major bottleneck, namely the availability of bulk substrates for homoepitaxy (DFG-partners IKZ and HU Berlin). Whereas only β-Ga2O3 and ZnO crystals can be grown from melt, due to strong evaporation In2O3 and SnO2 crystals have to be grown by flux growth or via vapor phase. However, so far these crystals are not available in sufficient size and high perfection for substrates for high quality films. The crystal growth will be closely accompanied by extensive characterization including photoemission and x-ray absorption spectroscopy (HU Berlin).

• DFG-Verfahren: Sachbeihilfen
• Internationaler Bezug: USA
• Beteiligte Person: Professor James Speck, Ph.D.