Development of lateral polarity AlN/GaN heterostructures for nonlinear optical applications

• Applicant: Professor Dr. Stefan Krischok
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2005 to 2010
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 5453240

• Final Report Year: 2010

Final Report Abstract

Within this project the growth and properties of structured and unstructured polar GaN samples grown by MBE and MOCVD on Al2O3 and SiC was successful studied. Growth of structured and unstructured polar GaN: The growth of GaN with MBE and MOCVD was studied and optimized [F6]. N-face and Ga-face GaN layers with a high crystal quality could be achieved. However the measurements show that growth of thick GaN-based LPHs with molecular beam epitaxy presented better results. Ex-situ and in-situ characterisation of structured and unstructured polar GaN: The investigation of ex-situ and in-situ grown GaN samples as well as the interaction of clean GaN surfaces with gas molecules was studied. The investigation of the clean surfaces exhibit new (till then unkown) surface states [5]. Within this project the interaction of water and oxygen with clean fresh grown and reconstructed GaN surfaces was studied [9,13]. Furthermore the collected experiences could be used by the functionalisation of GaN [F11,F12]. Second harmonic generator: Within this project a successful development of the GaN-based lateral polarity hetereostructure was possible. The GaN-based LPH with different periods down to 2 µm was grown on a structured AlN/Al2O3 template by plasma assited molecular beam epitaxy. A GaN layer thickness up to 3 µm was achieved. The 3 µm thick GaN-based LPHs with a periodicity about 5.34 µm shows a successful second harmonic generation with a primary wave length about 1075 nm.

Publications

• Determination of the Dielectric Function of Nitride Semiconductors. Workshop on UV/VUV-spectroscopy for thin film and interface analysis, Berlin, 1. Dezember 2005
  R. Goldhahn
  
• Determination of the polarization discontinuity at the AlGaN/GaN interface by electroreflectance spectroscopy. Appl. Phys. Lett. 86(18), 181912 (2005)
  A.T. Winzer, R. Goldhahn, G. Gobsch, A. Link, M. Eickhoff, U. Rossow, A. Hangleiter
  
• Dielectric function and critical points of the band structure for AlGaN alloys. Phys. Status Solidi. B 242(13), 2610 – 2616 (2005)
  C. Buchheim, R. Goldhahn, M. Rakel, C. Cobet, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter
  
• (Poster) Molecular beam epitaxy of GaN lateral polarity structures. 6. International Symposium on Growth of III-Nitrides (ISGN) - Linköping(Schweden)
  M. Himmerlich, V. Lebedev, F. Will, V. Cimalla, P. Lorenz, S. Krischok, J. A. Schaefer, O. Ambacher
  
• Critical points of the band structure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy. Phys. Status Solidi C 3 (6), 2009 – 2013 (2006) 2007
  C. Buchheim, R. Goldhahn, A.T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, O. Ambacher
  
• Critical points of the band structure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy. Spring Meeting of the German Physical Society in conjunction with 21. General Conference of the EPS Condensed Matter Division Dresden (27.- 31.03.2006)
  C. Buchheim, R. Goldhahn, A.T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter
  
• Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to hydrogen. Appl. Phys. Lett. 88(2), 024101 (2006)
  A.T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff
  
• Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment. Phys. Rev. B 74(12), 125207/1-10 (2006)
  A.T. Winzer, G. Gobsch, R. Goldhahn, D. Fuhrmann, A. Hangleiter, A. Dadgar, A. Krost
  
• Modulation spectroscopy of nitrides-Franz-Keldysh theory versus exciton Stark shift. 2. Int. Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland, 29. June-1. July 2006
  R. Goldhahn
  
• (Poster) Characterization of GaN-based lateral polarity heterostructures 7. International Conference on Nitride Semiconductors (ICNS) - Las Vegas (USA). 7. International Conference on Nitride Semiconductors (ICNS) - Las Vegas (USA)
  P. Lorenz, V. Lebedev, F. Niebelschütz, S. Hauguth, O. Ambacher, J. A. Schaefer, S. Krischok
  
• (Poster) Oxidation of GaN-based lateral polarity heterostructures. 71. Frühjahrstagung der Deutschen Physikalischen Gesellschaft - Regensburg
  P. Lorenz, V.Lebedev, R. Gutt, J. A. Schaefer, O. Ambacher, S. Krischok
  
• AlGaN/GaN – based MEMS with two-dimensional electron gas for novel sensor applications. 7. International Conference on Nitride Semiconductors (ICNS) - Las Vegas (USA)
  F. Niebelschütz, V. Cimalla, K. Tonisch, Ch. Haupt, K. Brückner, R. Stephan, M. Hein and O. Ambacher
  
• Band structure and optical properties of group-III-nitride materials. 4. Int. Conf. on Spectroscopic Ellipsometry, Stockholm, Sweden, 11. – 15. June 2007
  R. Goldhahn
  
• Coalescence aspects of III-nitride epitaxy. J. Appl. Phys. 101, 054906 (2007)
  V. Lebedev, K. Tonisch, F. Niebelschütz, V. Cimalla, D. Cengher, I. Cimalla, Ch. Mauder, S. Hauguth, O. Ambacher, F. M. Morales, J. G. Lozano, D. González
  
• Modulation spectroscopy of AlGaN/GaN heterostructures: The influence electron-hole interaction. Phys. Status Solidi A 204, 447-458 (2007)
  R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff
  
• Optical constants of Bulk Nitrides in: Nitride Semiconductor Devices: Principles and Simulation, ed. by J. Piprek. WILEY-VCH (Weinheim), 95 - 115 (2007)
  R. Goldhahn, C. Buchheim, P. Schley, A.T. Winzer, H. Wenzel
  
• Optical constants of bulk nitrides. EFRE Colloquium “GaN/AlN competence center Berlin”, Berlin, 25. September 2007
  R. Goldhahn
  
• Piezoelectric actuation of all-nitride MEMS 7. International Conference on Nitride Semiconductors (ICNS) - Las Vegas (USA). 7. International Conference on Nitride Semiconductors (ICNS) - Las Vegas (USA)
  K. Tonisch, F. Niebelschuetz, V. Cimalla, R. Goldhahn, C. Buchheim, M. Donahue, O. Ambacher
  
• Stark shift of interband transitions in AlN/GaN superlattices. Appl. Phys. Lett. 90(24), 241906 (2007)
  C. Buchheim, R. Goldhahn , A.T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr , M. Eickhoff
  
• (Poster) Surface Analysis of III-Nitride-Based Lateral Polarity Heterostructures for Nonlinear Optics. 22. General Conference of the Condensed Matter Division of the European Physical Society (EPS - CMD) - Rom(Italien)
  P. Lorenz, S. Hauguth-Frank, J. A. Schaefer, V. Lebedev, O. Ambacher, and S. Krischok
  
• AlInN/GaN based multi quantum well structures - growth and optical properties. International Workshop on Nitride semiconductor (IWN) - Montreux (Schweiz)
  C. Hums, A. Gadanecz, A. Dadgar, J.Bläsing, P. Lorenz, S. Krischok, F. Bertram, A. Franke, J. A. Schaefer, J. Christen, A. Krost
  
• Band Structure and Optical Properties of Nitride Semiconductors. 3. Int. Conf. on Optical, Optoelectronic Photonic Materials and Applications (ICOOPMA), Edmonton, Canada, 20.-25. July 2008
  R. Goldhahn
  
• Characterization of GaN-based lateral polarity heterostructures. Phys. Status Solidi C 5, 1965-1967 (2008)
  P. Lorenz, V. Lebedev, F. Niebelschütz, S. Hauguth, O. Ambacher, J. A. Schaefer, and S. Krischok
  
• Electric field distribution in GaN/AlGaN/GaN heterostructures with twodimensional electron and hole gas. Appl. Phys. Lett. 92 (1), 013510 (2008)
  C. Buchheim, R. Goldhahn, G. Gobsch, K. Tonisch, V. Cimalla, F. Niebelschütz, O. Ambacher
  
• Electronic structure of GaN(0001)-2x2 thin films grown by PAMBE. Phys. Status Solidi RRL 2, 212-214 (2008)
  R. Gutt, P. Lorenz, K. Tonisch, M. Himmerlich, J. A. Schaefer, S. Krischok
  
• Influence of anisotropic in-plane strain on the optical properties of (0001)-oriented GaN films. 3. Int. Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland, 3.–5. July 2008
  M. Röppischer, C. Cobet, N. Esser, R. Goldhahn, C. Buchheim, F. Furtmayr, T. Wassner, M. Eickhoff
  
• Influence of anisotropic strain on excitonic transitions in a-plane GaN. E-MRS Spring Meeting “Symposium G: Wide band gap semiconductor nanostructures for optoelectronic applications”, Strasbourg, France, 26.-30. May 2008
  C. Buchheim, M. Röppischer, R. Goldhahn, G. Gobsch, C. Cobet, N. Esser, A. Dadgar, M. Wieneke, J. Bläsing, A. Krost
  
• Influence of anisotropic strain on excitonic transitions in a-plane GaN. Spring Meeting of the German Physical Society, Berlin, 25.-29. February 2008
  M. Röppischer, C. Buchheim, R. Goldhahn, G. Gobsch, A. Dadgar, M. Wieneke, J. Bläsing, A. Krost
  
• Initial states of GaN-oxidation. 25. European Conference on Surface Science (ECOSS) – Liverpool (GB)
  P. Lorenz, R. Gutt, S. Hauguth - Frank , V. Lebedev, O. Ambacher, J. A. Schaefer, and S. Krischok
  
• Investigation of strained semiconductors by modulation spectroscopy. Cargese Summer School “NANOSTRESS”, Corsica, France, 29.9. – 5.10.2008
  C. Buchheim
  
• MOVPE Growth and Characterization of AlInN HEMT Structures on Si(111). Materials Research Society Symposium Proceedings 1068, 45-50 (2008)
  C. Hums, A. Gadanecz, A. Dadgar, J. Bläsing, H. Witte, T. Hempel, A. Diez, P .Lorenz, S. Krischok, J. A. Schaefer, C. Christen, and A. Krost
  
• Optical spectroscopy of wide-gap semiconductors: Is our picture of van Hove singularities still valid? Spring Meeting of the German Physical Society, Berlin, 25.-29. February 2008
  R. Goldhahn
  
• Piezoelectric actuation of (GaN)/AlGaN/GaN heterostructures. J. Appl. Phys. 104 (8), 084516/1-8 (2008)
  K. Tonisch, C. Buchheim, F. Niebelschütz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, R. Goldhahn
  
• Piezoelectric actuation of all-nitride MEMS. Phys. Status Solidi C 5 (6), 1910–1913 (2008)
  K. Tonisch, C. Buchheim, F. Niebelschütz, M. Donahue, R. Goldhahn, V. Cimalla, O. Ambacher
  
• Poster: Oxidation of GaN(0001)-2x2 surfaces by oxygen and water. 72. Frühjahrstagung der Deutschen Physikalischen Gesellschaft - Berlin
  P. Lorenz, R. Gutt, J.A. Schaefer, and S. Krischok
  
• (Poster) In-situ investigation of ultrathin GaN layers on sapphire by photoelectron spectroscopy. 12. International Conference on the Formation of Semiconductor Interfaces (ICFSI)- Weimar
  P. Lorenz, C. Hamsen, J. A. Schaefer, S. Krischok
  
• AlInN/GaN based multi quantum well structures - growth and optical properties. Phys. Status Solidi C 6(S2), S451-S454 (2009)
  C. Hums, A. Gadanecz, A. Dadgar, J. Bläsing, P. Lorenz, S. Krischok, F. Bertram, A. Franke, J. A. Schaefer, J. Christen, A. Krost
  
• Analysis of polarization-dependent photoreflectance studies for c-plane GaN films grown on a-plane sapphire. Phys. Status Solidi A 206(5), 773 – 779 (2009)
  M. Röppischer, R. Goldhahn, C. Buchheim, F. Furtmayr, T. Wassner, M. Eickhoff, C. Cobet, N. Esser
  
• Identification of van Hove singularities in the GaN dielectric function: a comparison of the cubic and hexagonal phase. Phys. Status Solidi B 246(7), 1440 – 1449 (2009)
  C. Cobet, R. Goldhahn, W. Richter, N. Esser
  
• Impact of stress on the optical properties of AlN layers. E-MRS Fall Meeting, Symposium “Wide band gap II-VI and III-V semiconductors”, Warsaw, Poland, 14. – 18. September 2009
  G. Rossbach, G. Gobsch, R. Goldhahn, M. Röppischer, C. Werner, C. Cobet, N. Esser, A. Dadgar, M. Wieneke, A. Krost, B. Bastek, F. Bertram, J.H. Christen
  
• Influence of anisotropic strain on the excitonic transitions in a-plane GaN. Microelectronics Journal 40(2), 322 – 324 (2009)
  C. Buchheim, M. Röppischer, R. Goldhahn, G. Gobsch, C. Cobet, C. Werner, N. Esser, A. Dadgar, M. Wieneke, J. Bläsing, A. Krost
  
• Initial stages of GaN(0001)-2x2 - oxidation. 73. Frühjahrstagung der Deutschen Physikalischen Gesellschaft - Dresden
  P. Lorenz, R. Gutt, J. A. Schaefer, S.Krischok
  
• Interaction of GaN(0001)-2x2 with H2O. 12. International Conference on the Formation of Semiconductor Interfaces – Weimar
  P. Lorenz, R. Gutt, T. Haensel, J. A. Schaefer, S. Krischok
  
• Interaction of Oxygen and Water with Group III-Nitride (InN,GaN) surfaces 17. Annual International Conference on Composites/Nano Engineering (ICCE-17). Honolulu 26.7. – 1.8. conference proceedings
  A. Eisenhardt, P. Lorenz, M. Himmerlich, R. Gutt, J. A. Schaefer, S. Krischok
  
• Interaction of Oxygen and Water with Group III-Nitride (InN,GaN) surfaces. 17. International Conference on Composites/Nano Engineering (ICCE) – Hawaii (USA)
  A. Eisenhardt, P. Lorenz, M. Himmerlich, R. Gutt, J. A. Schaefer, S. Krischok
  
• Interaction of reconstructed GaN(0001) and InN(0001) surfaces with oxygen. 26. European Conference on Surface Science (ECOSS) - Parma(Italien)
  P. Lorenz, A. Eisenhardt, R. Gutt, M. Himmerlich, J. A. Schaefer, S. Krischok
  
• Low vacuum photo electron emitting thin films. Phys. Status Solidi A 206(3), 484-488 (2009)
  C. Zimmer, K. Medyanyk, G. Schoenhense, S. Krischok, P. Lorenz, J. Schubert, T. Doll
  
• Optical Anisotropy of nitride semiconductors. Spring Meeting of the German Physical Society, Dresden, 22.-27. March 2009
  R. Goldhahn
  
• Optical properties of bulk-like nitride semiconductors. E-MRS Fall Meeting, Warsaw, Poland, 14. – 18. September 2009
  R. Goldhahn
  
• Optoelectronic properties of AlxGa1-xN-films studied by means of ellipsometry. 216. Electrochemical Society Meeting, Symposium “E9 - State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials & Devices 10”, Vienna, Austria, 4. – 9. October 2009
  C. Cobet, C. Werner, M. Röppischer, N. Esser, R. Goldhahn
  
• Poster: Angle-resolved photoelectron emission from GaN(0001)-2x2 surfaces. 8. International Conference on Nitride Semiconductors (ICNS) - Jeju Island (Korea)
  P. Lorenz, R. Gutt, M. Himmerlich, J. A. Schaefer, S. Krischok
  
• Surface analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy. Fall Meeting European Materials Research Society - Warschau (Polen)
  P. Lorenz, R. J. Koch, T. Haensel, R. Gutt, J. A. Schaefer, S. Krischok
  
• A novel functionalization of AlGaN/GaN-ISFETs for DNA-sensors. Materials Research Society Symposium Proceedings 1202, 1202-I06-02 (2010)
  S. Linkohr, S. U. Schwarz, S. Krischok, P. Lorenz, T. Nakamura, V. Polyakov, V. Cimalla, C. Nebel, O. Ambacher
  
• Analysis of the band offsets between ultrathin GaN(000-1) layers and sapphire (0001) by photoelectron spectroscopy. Phys. Status Solidi C 7, 268-271 (2010)
  C. Hamsen, P. Lorenz, J. A. Schaefer, S. Krischok
  
• Interaction of GaN(0001)-2x2 surfaces with H2O. Phys. Status Solidi C 7, 169-172 (2010)
  P. Lorenz, R. Gutt, T. Haensel, M. Himmerlich, J. A. Schaefer, S. Krischok