Ion beam doping of semiconductor nanowires

• Applicant: Professor Dr. Carsten Ronning
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2004 to 2011
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 5428711

The aim of this research project is the modification and doping of very small one-dimensional structures, so called "nanowires", made out of semiconducting materials using energetic ion beams. Nanowires play a major rule within the area of nanotechnology and are usually synthesized by thermal evaporation, a method that will be applied within this research study. On one hand, the prepared simiconducting nanowire will be modified using ion beams in order to control the overall morphology as well as to induce new connection points between different nanowires. On the other hand, electrically, optically, and magnetic active impurity atoms will be incorporated into the semiconducting nanowires by ion implantation for the realization of the two long-term aims: one-dimensional nanoscale (1) diodes or transistors and (2) spintronics.

• DFG Programme: Priority Programmes
• Subproject of: SPP 1165: Nanowires and Nanotubes: From Controlled Synthesis to Functions