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High-Field EPR with optical detection in semiconductors

Subject Area Experimental Condensed Matter Physics
Term from 2002 to 2006
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 5382689
 
High-field EPR and ENDOR with optical detection (high field ODMR) can have several advantages over conventional high-field EPR using microwave bridges: Higher sensitivity allowing the investigation of low defect concentrations in very small volumes and direct correlation of optical and microscopical properties. We want to improve our 72/95 GHz ODMR set up for PL-(photoluminescence) detected EPR/ENDOR with respect to better cavities with optical access for PL-ENDOR. Furthermore we want to investigate the structure of P-related dopants implanted into thin epitaxial layers of 4H- and 6H-SiC with respect to their lattice sites, electronic and microscopic structures as well as the accompanying implantation defects and their annealing properties.
DFG Programme Priority Programmes
Participating Person Professor Dr. Johann-Martin Spaeth
 
 

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