Project Details
Projekt
Hybrid Memristive Device with Multilevel-Modulated Electrical Conductance of Interfaced Atomically Thin 2D Materials and Molecular Oxides (2DPOMristor)
Subject Area
Synthesis and Properties of Functional Materials
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term
since 2023
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 536022773
The project 2DPOMristor aims to develop a conceptually new memristive device based on intrinsic and synergetic properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) and molecular metal-oxide (polyoxometalate, POM) switching materials. Because of their ability to exhibit redox-based conductance switching at room temperature, POMs as zero-dimensional (0D) single molecules or 2D layers will be used as leverage to modulate the resistive properties of 2D-TMDC semiconductors. The implementation of electrical contact measurements by micro needles should ensure an effective transition from fundamental microspectroscopic studies towards economically relevant devices for the development of cost-efficient electronics. The project bundles research activities at the cross-section of technologically oriented surface modification by responsive organic-inorganic materials using wet-chemical and vacuum-based methods, scanning probe microscopy and potential-induced switching, external electrical contacting by synchronized measurements, and computational chemistry. As a proof of principle, a 3D print of the 2DPOMristor prototype device with a crossbar array of solution-processed memristive cells will be realized by using a solvent-based inkjet technique. The ambition of the project along the value chain is to achieve the technology readiness level 4 (technology validated in lab).
DFG Programme
Priority Programmes
