Porenätzung in III-V Halbleitern

• Antragsteller: Professor Dr. Helmut Föll
• Fachliche Zuordnung: Physikalische Chemie von Festkörpern und Oberflächen, Materialcharakterisierung
• Förderung: Förderung von 2000 bis 2006
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5283300

The proposed project aims at combining the detailed knowledge about the electrochemistry of III-V compounds (Moldavia) and Si (Germany) for a more detailed understanding of the interface processes in general and pore etching in particular. Experimental work will be focussed in Kiel; Moldavia supplies an experienced PhD student, specimens and III-V know-how. The project starts with a thorough investigation of electrochemical specifica in III-V compounds employing the methods and tools as well as suitable components of a general model developed in Kiel for Si. First experiments with III-V materials have been successful and validate the approach. The aim is to improve the general understanding of III-V electrochemistry and to find etching conditions which allow to generate pore structures and morphologies similar to the well known macro- and mesopores in Si. The production of photonic crystals is a specific goal within this context. It is expected that the close collaboration of III-V and Si etching specialists will generate some spin-off for the pore etching in Si, too, which, although much more thoroughly investigated than III-V compounds, is still not understood very well.

• DFG-Verfahren: Sachbeihilfen
• Internationaler Bezug: Moldau
• Beteiligte Person: Professor Dr. Ivan Tiginyanu