Optically Active Silicon-Based Nanostructured III-V Compound Semiconductors (OASIS)

• Applicants: Professor Dr. Martin Ezequiel Garcia; Professor Dr. Johann Peter Reithmaier
• Subject Area: Experimental Condensed Matter Physics ; Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering ; Solid State and Surface Chemistry, Material Synthesis ; Synthesis and Properties of Functional Materials
• Term: since 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 522061391

A novel silicon-based hybrid material system will be developed and investigated, which may have in future a huge impact for the integration of electrooptically active devices on a silicon platform. In some preliminary experiments it could be proven that a full inclusion of III-V nanoclusters in a defect-free Si single crystal matrix is possible to realize. In this project this novel class of material will be further developed by molecular beam epitaxy and investigated by morphological (XRD, AFM, FIB-SEM, TEM) and optoelectronic studies (low-T PL, reflection and excitation spectroscopy, photocurrent and CV measurements). The work will be strongly supported by theory, which includes the simulation of growth processes far away from thermal equilibrium and the calculation of bandstructures and band offsets. For the first time, by comparing theory with optical and electrical measurements, a fundamental understanding of the optical, electrical and morphological properties will be developed.

• DFG Programme: Research Grants