Inorganic, Interface-Dominated Heterostructures for Device Concepts (B13*)

• Subject Area: Experimental Condensed Matter Physics
• Term: since 2021
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 223848855

This project investigates quantum well combinations with W-type band alignment regarding their application potential as active layers in lasers and ultimately demonstrate laser operation beyond the telecom windows by combining two metastable compound semiconductors, Ga(N,As) and Ga(As,Bi). The heterostructures will be grown by metal organic vapour phase epitaxy using in-situ diagnostics. Structural and electronic properties will be correlated with laser performance-related properties, like gain amplitude and dynamics. Selected structures will be processed in bar geometries for edge emitters allowing for in-operando experiments on, e.g., heat dissipation.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 1083: Structure and Dynamics of Internal Interfaces
• Applicant Institution: Philipps-Universität Marburg
• Project Heads: Professor Dr. Sangam Chatterjee; Professorin Dr. Kerstin Volz