Project Details
Projekt
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf)
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Electrical Energy Systems, Power Management, Power Electronics, Electrical Machines and Drives
Electrical Energy Systems, Power Management, Power Electronics, Electrical Machines and Drives
Term
since 2021
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 462842206
Power transistors are key components in modern electromobility and in the utilization of renewable energies. Among other things, they are used to transform voltages and currents and control drive motors and generators. In addition to the long-established silicon-based IGBTs and SiC technology, GaN-HEMTs based on compound semiconductor technology now offer an even more effective and faster switching type of power transistor that can substantially improve switching losses and thus the efficiency of switching applications. However, in order to utilize the full potential of these GaN-HEMTs, the type and efficiency of their control, which takes place via so-called gate drivers, is crucial. In the GaNdalf project proposal, as a supplement and extension of the concepts and CMOS-integrated solutions for adaptive gate driver circuits for GaN-HEMTs developed in the previous AGaNDrive project, extremely fast, current source-supported drivers are being developed as an alternative, which offer specific advantages depending on the load situation. The aim is to ensure particularly fast and safe switching with minimal transient effects (so-called "ringing") or overshoot and to enable compact switching assemblies that do not require a multitude of large additional passive components (e.g. capacitors) to comply with electromagnetic compatibility limits and still operate the GaN-HEMT gently for a long service life. The operating point and load conditions of a GaN-HEMT can change over a very wide range depending on the application. In GaNdalf, the gate driver concepts from the previous project (AGaNDrive) with impedance-stepped, voltage-driven controll and with inductive feed-forward coupling are therefore to be extended by the current source-based control newly developed in the project and integrated on a CMOS chip as a hybrid driver. The flexibility gained as a result makes it possible for the first time to generate the best possible adapted gate signals. Based on the feedback information about current peak values and rise times, the load situation of the GaN-HEMT is to be deduced by means of a higher-level control logic and the most suited gate-driver circuit principle is to be selected automatically. For detailed characterization and experimental evaluation, a setup for system integration of the developed concepts (demonstrator) will be created. A typical DC/DC converter with synchronous rectification and a drive converter for a 400V electric motor serve as example applications.
DFG Programme
Priority Programmes
Subproject of
SPP 2312:
Energy Efficient Power Electronics "GaNius"
