Experimental verification of the Spin Gunn Effect

• Applicant: Professor Dr. Gert Denninger
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2007 to 2011
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 40997636

The formation and transit of charge domains through n-type semiconductors like GaAs or InP at high electric fields lead to the established Gunn effect. It is proposed that this phenomenon is spin dependent and leads to spin polarized domains moving through the material. This is termed the Spin Gunn Effect. This project proposes to verify experimentally the existence of the spin Gunn effect and to investigate its dynamics. A pulsed NMR scheme will be used to measure the Dynamic Nuclear Polarization induced by the passage of the spin polarized electron domains.

• DFG Programme: Priority Programmes
• Subproject of: SPP 1285: Semiconductor Spintronics