Self-Aligned Short Channel Complementary Field Effect Transistors on Transparent Substrates (SACFETTS)

• Applicant: Professor Dr.-Ing. Ulrich Hilleringmann
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2016 to 2019
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 318540667

Based on p-type organic and n-type ZnO- thin-film transistors on transparent substrates an advanced complementary transistor integration technique with short channel capability will be developed and analyzed. A shrink in the transistor channel length and a reduction of the parasitic capacitances from the gate to the drain/source contacts by self-alignment will shrink the delay time and will improve the RF-characteristics of these FETs. Additionally a transfer from ZnO to ZnO/SnO2 nanoparticle films and an application of DNTT or C8-BTBT will raise the transistors charge carrier mobilities into the >10 cm2/(Vs) range. This will enable electronics for high frequencies of some tenth of MHz at a low production cost level. Main requests for processing of the devices are: - Self-alignment of the gate structures by special UV light exposure technique - Extension of the technique into the sub-µm range - Introduction of a suitable gate dielectric layer and analysis on the transistors cut-off frequency - A common metallization for both types of transistors including contact resistance analysis - Compensation of instability effects due to traps and interface states - Quality and parameter analysis: Comparison of standard and self-aligned transistors with inverted coplanar and inverted staggered device setups - Complementary inverter setups with self-aligned transistors in comparison to standard transistors For further developments attention will be paid to low temperature processing and ink jet printing capability for the applied layers

• DFG Programme: Research Grants