Analysis of IMD sweet-spots in microwave field-effect transistors for improved linearity of power amplifiers for UMTS application

• Applicant: Professor Dr.-Ing. Günter Kompa
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2006 to 2009
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 30020003

• Final Report Year: 2009

Final Report Abstract

No abstract available

Publications

• "Investigation of IMD3 in GaN HEMT Based on Extended Volterra Series Analysis," Proc. of European Microwave Integrated Circuits (EuMIC) Conference, pp. 52-55, Munich, Germany, October 2007
  E. R. Srinidhi and G. Kompa
  
• "Analysis, Design and Efficiency Enhancement of GaN RF Power Amplifiers," Doctoral Thesis. Department of High Frequency Engineering, University of Kassel, Kassel, Gennany, November 2008
  A. Z. Markos
  
• "Application Rules for Accurate IMD Characterization in GaN HEMTs," Proc. of German Microwave Conference (GeMIC), pp. 171-174, March 2008
  E. R. Srinidhi, R. Ma, and G. Kompa
  
• "Improved Large-Signal Measurement Technique for Reliable IMD Characterization in GaN HEMTs." Proc. of the European Microwave Association Journal, Vol. 4 (Suppl. 1). pp. 79-86. December 2008
  E. R. Srinidhi, R. Ma, and G. Kompa
  
• "Intermodulation Distortion Modelling and Measurement Techniques for GaN HEMT Characterization," Doctoral Thesis, Department of High Frequency Engineering, University of Kassel, Kassel, Germany, December 2008
  E. R. Srinidhi
  
• "Optimization of Broadband Drain Modulation in GaN HEMT Devices." IEEE Proc. of Radio and Wireless Symposium (RWS), pp. 81-84, Orlando, FL, January 2008
  E. R. Srinidhi, R. Ma, A. Z. Markos, and G. Kompa
  
• "Volterra Series Based Distortion Analysis for Optimization of Out-of-Band Terminations in GaN HEMT Devices," IEEE Electron Device Letters, Vol. 29, No. 1, pp. 24-27, January 2008
  E. R. Srinidhi, R. Ma, and G. Kompa
  
• Key Aspects for Characterizing Device Inherent IMD in GaN HEMTs," Proc. of 38th European Microwave Conference (BuMC), pp. 1117-1120. Amsterdam, The Netherlands, October 2008
  E. R. Srinidhi, B. Wittwer, R. Ma, and G. Kompa