Theory and modelling of valence change based resistive switching (B08)

• Subject Area: Experimental Condensed Matter Physics
• Term: from 2015 to 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 167917811

In Project B8 we aim at extending the atomistic simulations to electrode materials and the elec-trode/oxide interface. In addition, we plan to cover the effect of the incorporation of hydrogen. Kinetic Monte Carlo simulations will be used to study the ways of improving the performance metrics of ReRAM like the reliability, switching endurance and on/off resistance ratio, using the results of the ab initio ap-proach and the genetic algorithm as input. This study will be linked to the drift-diffusion model in B1.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 917: Resistively Switching Chalcogenides for Future Electronics - Structure, Kinetics and Device Scalability: 'Nanoswitches'
• Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Heads: Professor Dr. Stefan Blügel; Professor Dr.-Ing. Christoph Jungemann; Professorin Dr. Marjana Lezaic