Locally active memristive data processing (LAMP)
Final Report Abstract
Throughout the LAMP project, as a result of acquiring a large set of experimental data, an accurate physics- based model has been developed, which captures the temperature-activated Frenkel-Poole conduction mechanism underlying the nonlinear dynamics of our NbOx devices. Importantly, the introduction of this model ended a longstanding debate over the physical reason for the threshold switching effect in niobium oxide, proving that threshold switching at low currents is caused merely by temperature-activated Frenkel-Poole conduction, thus ruling out the emergence of a metal-insulator transition in this physical process. An adapted version of the model later introduced to account for the electrodes’ contact resistances and parasitic conduction paths. Furthermore, the impact of the device dynamic behavior on its electrical characterization was thoroughly investigated based on a given measurement setup. This analysis revealed, particularly, the appearance of multiple-NDR effects within the device quasi-static current-voltage characteristics in those scenarios where, the presence of a sufficiently large electrical RC element in the measurement setup, induced the emergence of oscillations during the voltage sweep. Our study uncovered the true origin for the multiple NDR phenomenon, which stems simply from the time-averaging operation, which the Source Measure Unit (SMU) applies to the acquired memristor current data. These results enabled to stop the potential dissemination of misconceptions in the literature. System-theoretic techniques were adopted to gain an in-depth understanding of the mechanisms underlying threshold switching effects in niobium oxide. In particular, the origin for the instability of the Negative Differential Resistance (NDR) branch in the device DC current-voltage characteristic, extracted under voltage stimulation, was identified, and a suitable bias circuit, enabling the stabilization of this branch, was devised. This study guided us toward the design of a robust memristor-based relaxation oscillator, and a good understanding of the role of each model parameter with respect to the characteristics of the oscillator. It also enabled to study static and dynamic pattern formation in resistively-coupled arrays of identical cells comprised of such oscillators. Those patterns emerge for design parameters poising the isolated cell in the locally active and stable domain, also referred to as Edge of Chaos, which is where the origin for complexity may be found. This body of knowledge was utilized to gain a better understanding of how to optimize the layer stack so as to boost the device performance in a given application. The physical realization of multilayer stacks endows the resulting devices with a higher degree of nonlinearity, by increasing the voltage extension of the NDR region while preserving their symmetric switching behavior. In the framework of the project, we established a fabrication process flow for devices with an area below 1 μm². The composition, and the design of these devices were optimized to enhance their performance in the applications of interest. Finally, the chips, diced from the wafer, and hosting a number of devices, were bonded via gold wires to DIL packages. The physics- based model was first fitted to experimental data from these new devices and then endowed with an additional parameter, which allows reproducing the statistical variability in their electrical parameters. This final variant of the model was employed to explore the potential of memristor oscillatory networks to solve a complex combinatorial optimization problem. Namely, the example of graph coloring was investigated, by exploiting the locally-active dynamics of the NbOx devices, which can induce an asymptotic separation between the relative phases of the oscillators. This difference in the phases can be utilized to partition the graph vertices into a set of different color groups, which poses a valid solution to the graph coloring problem. Two strategies, aiming to enhance the capability of the proposed computing engine to solve complex graph coloring problems with multiple valid solutions, were illustrated. Both strategies are based on resolving the impasse situation, that originates when the phase pattern of a given network converges toward a local minimum of a pre- specified optimization goal function. Furthermore, the fundamental role of those two strategies in enabling the proposed bio-inspired memristive network to outperform alternative state-of-the-art software and hardware implementations, was demonstrated.
Publications
- “Physical model of threshold switching in NbO 2 based memristors,” RSC Adv., vol. 5, no. 124, pp. 102318–102322, 2015
S. Slesazeck et al.
(See online at https://doi.org/10.1039/C5RA19300A) - “Unfolding principle gives insight into physics behind threshold switching in a NbO memristor,” in 2015 International Conference on Memristive Systems (MEMRISYS), Paphos, Cyprus, Nov. 2015, pp. 1–3
A. Ascoli, S. Slesazeck, H. Mahne, R. Tetzlaff, and T. Mikolajick
(See online at https://doi.org/10.1109/MEMRISYS.2015.7378399) - “A physics-based Spice model for the Nb2O5 threshold switching memristor,” p. 2, 2016, Print ISBN: 978-3-8007-4252-3
J. Radhakrishnan, S. Slesazeck, H. Wylezich, A. Ascoli, and R. Tetzlaff
- “Analysis of V th variability in NbO x -based threshold switches,” in 2016 16th Non-Volatile Memory Technology Symposium (NVMTS), Pittsburgh, PA, USA, Oct. 2016, pp. 1–5
S. Slesazeck, M. Herzig, T. Mikolajick, A. Ascoli, M. Weiher, and R. Tetzlaff
(See online at https://doi.org/10.1109/NVMTS.2016.7781515) - “Improvement of NbOx - based threshold switching devices by implementing multilayer stacks,” Semicond. Sci. Technol., vol. 34, no. 7, p. 075005, Jul. 2019
M. Herzig, M. Weiher, A. Ascoli, R. Tetzlaff, T. Mikolajick, and S. Slesazeck
(See online at https://doi.org/10.1088/1361-6641/ab1da3) - “Multiple slopes in the negative differential resistance region of NbOx -based threshold switches,” J. Phys. Appl. Phys., vol. 52, no. 32, p. 325104, Aug. 2019
M. Herzig, M. Weiher, A. Ascoli, R. Tetzlaff, T. Mikolajick, and S. Slesazeck
(See online at https://doi.org/10.1088/1361-6463/ab217a) - “Pattern Formation With Locally Active S-Type NbOₓ Memristors,” IEEE Trans. Circuits Syst. Regul. Pap., pp. 1–12, 2019
M. Weiher, M. Herzig, R. Tetzlaff, A. Ascoli, T. Mikolajick, and S. Slesazeck
(See online at https://doi.org/10.1109/TCSI.2019.2894218) - "Control Strategies to Optimize Graph Coloring via M-CNNs with Locally-Active NbOx Memristors," 2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST), 2021, pp. 1-8
A. Ascoli, M. Weiher, R. Tetzlaff, M. Herzig, S. Slesazeck and T. Mikolajick
(See online at https://doi.org/10.1109/MOCAST52088.2021.9493418) - “Analytical Investigation of Pattern Formation in an M- CNN with Locally Active NbO x Memristors,” in 2021 IEEE International Symposium on Circuits and Systems (ISCAS), Daegu, Korea, May 2021, pp. 1–5
A. S. Demirkol, A. Ascoli, I. Messaris, and R. Tetzlaff
(See online at https://doi.org/10.1109/ISCAS51556.2021.9401280) - “Improved Vertex Coloring With NbO ₓ Memristor-Based Oscillatory Networks,” IEEE Trans. Circuits Syst. Regul. Pap., vol. 68, no. 5, pp. 2082–2095, May 2021
M. Weiher, M. Herzig, R. Tetzlaff, A. Ascoli, T. Mikolajick, and S. Slesazeck
(See online at https://doi.org/10.1109/TCSI.2021.3061973) - “On Local Activity and Edge of Chaos in a NaMLab Memristor,” Front. Neurosci., vol. 15, p. 651452, Apr. 2021
A. Ascoli, A. S. Demirkol, R. Tetzlaff, S. Slesazeck, T. Mikolajick, and L. O. Chua
(See online at https://doi.org/10.3389/fnins.2021.651452) - “Optimization and Application of Niobium Oxide based Memristive NDR devices,” in 2021 17th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA), Catania, Italy, Sep. 2021, pp. 1–4
T. Mikolajick, M. Herzig, S. Slesazeck, M. Weiher, A. Ascoli, and R. Tetzlaff
(See online at https://doi.org/10.1109/CNNA49188.2021.9610782)
