Project Details
Projekt
Flexible analogue and digital circuit blocks in amorphous metal oxides
Applicant
Professor Dr. Marius Grundmann
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term
from 2015 to 2022
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 273039061
Based on the circuit building blocks developed in the first funding period, functional circuits with wireless communication interface operating at ISM band frequency of e.g. 13.56 MHz shall be realized. Also, an adequate passivation/packaging technology enabling long-term stability and mechanical robustness for real world daily usage shall be developed. The active electronic components rely on zinc-tin oxide thin films fabricated at room temperature by long-throw sputtering. As field-effect transistor technology MESFETs and JFETs will be implemented. Feature sizes will be reduced by about a factor of ten with pattern sizes in the 0.3 micrometer range. Further, the deposition of dielectrics will be performed in the sputtering system equipped with an O/N plasma source instead of the plasma-enhanced chemical vapor deposition used so far. Highest processing temperatures will not exceed 100°C. Passivation layers will be as well deposited by long-throw sputtering, preserving the performance of the functional circuits. Further, encapsulation/lamination of entire circuits will be investigated.
DFG Programme
Priority Programmes
