GRK 384:  Nanoelectronics, Micromechanics and Microoptics: Analysis and Synthesis by Ions, Electrons and Photons

• Subject Area: Condensed Matter Physics ; Electrical Engineering and Information Technology
• Term: from 1997 to 2006
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 272131

This research training group aims to manufacture and anlayse structures ranging from some microns to some 10 nanometres by ions, electrons and photons. The beams employed have focal diameters of about 10 nm, and are thus well below commonly employed photolitographic technology. The depth resolution, mainly employed for analytical purpose, is especially in the case of ion beams also in the nm-range. The aim is to prepare miniaturised electronical, mechanical and optical devices, profiting from the high ion-dose dynamics from doping up to sputtering. Complementarily, the high-resolution raster probe technique is used for analysis as well as for structurisation. Starting from thin, mainly epitactically grown (e.g. by MBE) layers, all methods yield dimensions in the order of the de-Broglie wavelength of the charge carries involved. The exhibited quantum phenomena are of high physical relevance and determine the functionality at the same time, which is most important from a technological point of view. This way, all participating institutes and postgraduate students are integrated in the process of preparation, analysis and production of results ideally complemented by the interdisciplinary nature of this network.The systems to be prepared consist of nanostructured semiconductors, monocrystalline micromechanical elements, dielectrics with rotational symmetry, metallic super conductors and innovative combinations of these. Among other aims, micromechanical elements with nanoelectronical filter stages shall be monolithically integrated. New fields of applications are to be opened up by this means. For example, recently amorphous Carbon-Diamond heterostructures are fabricated on high quality polycrystalline diamond films using focus ion beam implantation (100 keV Ga+, 200 keV Mn++ and 200 keV Dy++';' ion beam Æ100 nm). The structures are characterized by AFM-Profilometry and Raman spectroscopy. Systematic studies of the electrical properties, dose- and temperature dependencies are carried out.

• DFG Programme: Research Training Groups
• Applicant Institution: Ruhr-Universität Bochum
• Spokesperson: Professor Dr. Andreas Dirk Wieck
• Participating Researchers: Professor Dr. Konstantin Efetov (†); Professor Dr. Martin Hofmann; Professor Dr.-Ing. Ulrich Kunze; Professor Dr. Josef Pelzl; Professor Dr. Claus Rolfs; Professor Dr. Gustav Schweiger; Professor Dr. Michael-Karl Sostarich