1-D Multi-Gate FETs: Tailoring the Potential Landscape on the Nanoscale
Final Report Abstract
The possibility to manipulate the potential landscape in one-dimensional nanostructures facilitates investigating novel device concepts (such as a superlattice FET), it also allows reconfigurable devices, multi-valued logic and fundamental investigations. Existing approaches rely on electron-beam lithography and lift-off techniques. As a result, they are severely limited when scaling down the gate lengths and distances between adjacent gates into the sub-10nm regime. Here, we studied the implementation of buried multi-gate substrates with a large number of individually contacted gates exhibiting lengths down to 5nm with insulator thicknesses also in the range of 5nm. We demonstrated two different approaches and were able to prove the functionality of the buried multi-gate substrates by depositing InAs nanowires on top and manipulating the potential with different gate electrodes. Work in progress involves the investigation of carbon nanotubes as active channel material.
Publications
- (2018) Alternatives for Doping in Nanoscale Field-Effect Transistors. Phys. Status Solidi A (physica status solidi (a)) 215 (7) 1700969
Riederer, Felix; Grap, Thomas; Fischer, Sergej; Mueller, Marcel R.; Yamaoka, Daichi; Sun, Bin; Gupta, Charu; Kallis, Klaus T.; Knoch, Joachim
(See online at https://doi.org/10.1002/pssa.201700969) - „,Doped' Silicon without Dopants – Alternative for the Realization of Semiconductor Devices”, European Materials Res. Soc., E-MRS Spring Meeting (2017)
J. Knoch
- “Buried Multi-Gate InAs-Nanowire FETs”, European Solid-State Dev. Res. Conf. 2017
T. Grap, F. Riederer, C. Gupta and J. Knoch
- (2018): Alternatives for Doping in Nanoscale Field-Effect Transistors. In: Phys. Status Solidi A 215 (7), S. 1700969
J. Knoch
(See online at https://doi.org/10.1002/pssa.201700969)
