Ion implantation engineering of Si-Mn alloys with high-temperature ferromagnetism
Final Report Abstract
Silicon based alloys with Mn-ions are a potential candidate for the spintronic applications, as they exhibit complex electric and magnetic phenomena which can be effectively utilized as the integrated-circuit elements in the contemporary microelectronic technology. The Si1-xMnx alloys shows high-temperature ferromagnetism at low Mn concentration x ~ 0.05 – 0.1, but the small solubility of Mn-ions in Si leads to the formation of MnSi1.7 nanoparticles, which drives the system in an inhomogeneous phase and makes it irrelevant for the technological applications. However, a high Mn concentration in the Si1-xMnx alloys screens the precipitation of different inhomogeneous magnetic phases with high Curie temperature (TC). In this work, a set of Si1-xMnx alloy thin films alloy were prepared by the PLD technique on Al2O3 (0001) substrate. By varying the laser fluence during deposition and the Mn-ion implantation parameters, we have tailored a high temperature homogenous ferromagnetic phase in Si1-xMnx films. By using Mn ion implantation, we can turn on/off the high temperature ferromagnetism in Si1-xMnx films. In the other work, we have studied the implications of He-ion irradiation in complex oxides films such as, NiCo2O4, and CaRuO3. In these studies, we have achieved the unprecedented control over the physical properties by implementing various effects like structural variation, defects, oxygen vacancies, and interstitials.
Publications
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Anomalous Hall Effect in Polycrystalline MnxSi1–x (x ≈ 0.5) Films with the Self-Organized Distribution of Crystallites over Their Shapes and Sizes, JETP Letters 103, 476-483 (2016)
K. Y. Chernoglazov, S. N. Nikolaev, V. V. Rylkov, A. S. Semisalova, A. V. Zenkevich, V. V. Tugushev, A. L. Vasil’Ev, Y. M. Chesnokov, E. M. Pashaev, Y. A. Matveev, A. B. Granovskii, O. A. Novodvorskii, A. S. Vedeneev, A. S. Bugaev, O. Drachenko, S. Zhou
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Ferromagnetism of MnxSi1-x (x~0.5) films grown in the shadow geometry by pulsed laser deposition method, AIP Advances 6, 015020 (2016)
S. Nikolaev, A. Semisalova, V. Rylkov, V. Tugushev, A. Zenkevich, A. Vasiliev, E. Pashaev, K. Chernoglazov, Y. Chesnokov, I. Likhachev, N. Perov, Y. Matveyev, O. Novodvorskii, E. Kulatov, A. Bugaev, Y. Wang, S. Zhou
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Magnetic anisotropy peculiarities of high-temperature ferromagnetic MnxSi1−x (x ≈ 0.5) alloy films, EPL - Europhysics Letters 115, 37008 (2016)
A. B. Drovosekov, N. M. Kreines, A. O. Savitsky, S. V. Kapelnitsky, V. V. Rylkov, V. V. Tugushev, G. V. Prutskov, O. A. Novodvorskii, E. A. Cherebilo, E. T. Kulatov, Y. Wang, S. Zhou
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Magnetic anisotropy of polycrystalline high-temperature ferromagnetic MnxSi1-x (x≈0.5) alloy films, Journal of Magnetism and Magnetic Materials 429, 305-313 (2017)
A. B. Drovosekova, N. M. Kreines, A. O. Savitsky, S. V. Kapelnitsky, V. V. Rylkov, V. V. Tugushev, G. V. Prutskov, O. A. Novodvorskii, A. V. Shorokhova, Y. Wang, S. Zhou
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Defect-induced exchange bias in a single SrRuO3 layer, ACS Applied Materials and Interfaces 10, 27472-27476 (2018)
C. Wang, C. Chen, C.-H. Chang, H.-S. Tsai, P. Pandey, C. Xu, R. Böttger, D. Chen, Y.-J. Zeng, X. Gao, M. Helm, S. Zhou
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Engineering of high-temperature ferromagnetic Si1–xMnx (x ≈ 0.5) alloyed films by pulsed laser deposition: Effect of laser fluence, Journal of Magnetism and Magnetic Materials 459, 206-210 (2018)
P. Pandey, A. B. Drovosekov, M. Wang, C. Xu, S. N. Nikolaev, K. Yu. Chernoglazov, A. O. Savitsky, N. M. Kreines, K. I. Maslakov, E. A. Cherebilo, V. A. Mikhalevsky, O. A. Novodvorskii, V. V. Tugushev, V. V. Rylkov, M. Helm, S. Zhou
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Enhancing the magnetic moment of ferrimagnetic NiCo2O4 via ion irradiation driven oxygen vacancies, APL Materials 6, 066109 (2018)
P. Pandey, Y. Bitla, M. Zschornak, M. Wang, C. Xu, J. Grenzer, D. C. Meyer, Y. Y. Chin, H. J. Lin, C. T. Chen, S. Gemming, M. Helm, Y. H. Chu, S. Zhou
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Tunable disorder and localization in the rare-earth nickelates, Physical Review Materials 3, 053801 (2019)
C. Wang, C.-H. Chang, A. Huang, P.-C. Wang, P.-C. Wu, L. Yang, C. Xu, P. Pandey, M. Zeng, R. Böttger, H.-T. Jeng, Y.-J. Zeng, M. Helm, Y.-H. Chu, R. Ganesh, S. Zhou
