Materials World Network: Growth of nonpolar and semipolar GaN on Si and sapphire substrates and investigation of optical processes for high efficiency

• Applicant: Privatdozent Dr. Frank Bertram
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering ; Experimental Condensed Matter Physics
• Term: from 2012 to 2016
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 222080600

The objective of this proposal is to investigate the fundamentals of nonpolar and semipolar GaN growth with the aim of understanding the mechanisms governing defect formation and impurity incorporation as well as processes responsible for radiative recombination. Insight into mechanisms responsible for the defect formation will make it possible to elaborate approaches for reducing defect density and produce the high-optical-quality material for light-emitting diodes and laser diodes with enhanced brightness. The lack of polarization in nonpolar GaN and substantially reduced polarization in semipolar GaN will allow higher recombination efficiencies and eliminate the dependence of emission energy on injection level. The choice of Si and sapphire substrates is motivated by their high quality and wide availability, particularly in the context of cost cutting practices in high brightness LEDs for lighting applications.

• DFG Programme: Research Grants
• Participating Person: Professor Dr. Jürgen Christen