Project Details
Projekt
Electrically pumped III/V nanowire light emitters
Applicant
Dr.-Ing. Werner Prost
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term
from 2012 to 2020
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 186128001
Exclusively electrical stimulation shall be used for the emission of light in the wavelength regime of optical communications. We propose to grow axial and core-shell nanowire pn-junctions with inserted alloy semiconductor as the optically active material. The emission of light shall be controlled by advanced hetero structure nanowire design and technology. The composition of the optical active regime shall control the wavelength of light emission. The intensity and the mode spectrum shall be engineered by surface passivation (E3), dielectric coating (P1), and optical doping (P4). In addition to the control of the wavelength the work will focus on the elaboration of electrically stimulated lasing in coaxial pn hetero structure nanowires. The success of this approach will be evaluated by exited-state lifetime measurements (P2). Field-assisted self-assembly shall be adapted to optoelectronic devices in order to speed up their co-integration in fully processed circuits such as Si-CMOS.
DFG Programme
Research Units
Co-Investigator
Professor Dr. Franz-Josef Tegude
