Science of polar homo- and heterointerfaces

• Applicants: Dr. Martin Albrecht; Professor Dr. Axel Hoffmann
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering ; Experimental Condensed Matter Physics
• Term: from 2012 to 2016
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 198775133

In this project we explore the fundamental science of epitaxial interfaces with a discontinuity in electrical polarization in nitride-nitride and nitride-oxide systems. We aim to understand the structural, chemical, and electronic features that regulate the interfacial electronic properties. We base this proposal on a hypothesis that vertical and lateral heteropolar interfaces that approach „semiconductor-grade“ quality can be prepared, and that their study will lead to exciting opportunities for fundamental advances in interface physics and optic/electronic functionality. Our technical program will refine synthesis techniques that enable hybrid thin film structures of oxides and nitrides with heretofore unachievable material quality. By collaboration between synthesis and characterization groups we will be able to identify and understand the structural and chemical features that enable, interfere, or enhance heteropolar interface coupling. Our project will advance the general understanding of heteropolar interface . property relationships. Achieving this understanding will propel research in hybrid systems that lead to new physics, new functionality, an expanded set of low dimension optoelectronic devices, and a pathway to smart structures that utilize in a new way the non-linear dielectric response of ferroelectrics.

• DFG Programme: Research Grants