Wiring quantum dots - phase separation inducing new functionality
Final Report Abstract
Most modern technology relies mainly on materials with reduced dimensionalities, such as thin films (2D), nanowires (1D), and quantum dots (0D). An extreme success in synthesis, characterization, and application of the respective – but separated – material classes has been achieved within the past 30 years. In this research proposal we merged: (a) three young and important research groups out of Switzerland, Austria and Germany, as well as (b) two of the most important nanostructures for future applications: quantum dots and nanowires, which will result into nano-materials with superior functionality. The synthesis techniques are based on the use of phase separation as a vehicle for creating inhomogeneities within particular nanowire materials. Three promising approaches were investigated within our research: (i) synthesis of stochiometrically unstable compounds during growth, (ii) subsequent ion implantation beyond solubility limits, and (iii) controlled phase conversion by diffusion. The resulting “wired quantum dots” will need a comprehensive structural characterization using e.g. electron microscopy, X-Ray diffraction and Raman scattering so that the optimum synthesis parameters can be identified. The main focus of this project is the investigation of the correlation between the structure and functionality of the wired quantum dots, in order to enable novel electronic and photonic devices. A long term goal of the project includes the realization of a proto-type light emitting diode device and an electrical memory transistor with high-performance properties.
Publications
- A General Approach toward Shape-Controlled Synthesis of Silicon Nanowires. Nano Letters 13, 21 (2013)
W. Molnar, A. Lugstein, P. Pongratz, M. Seyring, M. Rettenmayr, C. Borschel, C. Ronning, N. Auner, C. Bauch, E. Bertagnolli
(See online at https://doi.org/10.1021/nl303152b) - Magnetic polarons and large negative magnetoresistance in GaAs nanowires implanted with Mn ions. Nano Letters 13, 5079 (2013)
S. Kumar, W. Paschoal Jr., A. Johannes, D. Jacobsson, C. Borschel, A. Pertsova, W.H. Wang, M.K. Wu, C Canali, C. Ronning, L. Samuelson, H. Pettersson
(See online at https://doi.org/10.1021/nl402229r) - Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires. Journal of Physics D: Applied Physics 47, 394003 (2014)
A. Johannes, S. Noack, W. Paschoal, S. Kumar, D. Jacobsson, K. Dick, H. Pettersson, L. Samuelson, G. Martines-Criado, M. Burghammer, C. Ronning
(See online at https://doi.org/10.1088/0022-3727/47/39/394003) - Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires. Applied Physics Letters 104, 153112 (2014)
W. Paschoal Jr, S. Kumar, D. Jacobsson, A. Johannes, V. Jain, C. M. Canali, A. Pertsova, C. Ronning, K. A. Dick, L. Samuelson, H. Pettersson
(See online at https://doi.org/10.1063/1.4870423) - Anomalous plastic deformation and sputtering of ion irradiated silicon nanowires. Nano Letters 15, 3800 (2015)
A. Johannes, S. Noack, W. Wesch, A. Lugstein, M. Glaser, C. Ronning Nano Letters 15, 3800 (2015)
(See online at https://doi.org/10.1021/acs.nanolett.5b00431) - Ion beam irradiation of nanostructures: sputtering, dopant incorporation and dynamic annealing. Semiconductor Science and Technology 30, 033001 (2015)
A. Johannes, H. Holland-Moritz, C. Ronning
(See online at https://doi.org/10.1088/0268-1242/30/3/033001)
