HVPE growth of high quality bulk AlGaN

• Applicant: Dr. Eberhard Richter
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2010 to 2013
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 139552396

• Final Report Year: 2014

Final Report Abstract

Some of the objectives of the project, that is, free-standing AlGaN layers for characterization of basic material properties and for use as pseudo-substrates for UV-B LEDs have proven to be too ambitious on the given time scale. However, these goals seem attainable in the planned continuation of the work. Within the project, the realization of AlGaN layer growth by HVPE succeeded in the entire composition range. A reactor was redesigned successfully and the AlGaN layer thickness was increased from the nm range to a range 20 to 40 microns by process optimization, development and use of proper patterned sapphire substrates. The crystal quality was improved and dislocation densities in the 109 cm-2 range and high transmittance were achieved. The results are important prerequisites for further research and future commercial exploitation.

Publications

• „HVPE of AlxGa1−xN layers on planar and trench patterned sapphire”, J. Cryst. Growth 353 (2012) 129
  S. Hagedorn, E. Richter, U. Zeimer, D. Prasai, W. John, M. Weyers
  (See online at https://doi.org/10.1016/j.jcrysgro.2012.05.028)
• "Origin of a-plane (Al,Ga)N formation on patterned c-plane AlN/sapphire templates", J. Phys.: Conf. Ser. 471 (2013) 012038
  A. Mogilatenko, H. Kirmse, S. Hagedorn, E. Richter, U. Zeimer, M. Weyers, G. Tränkle
  
• "Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy", J. Appl. Phys. 113 (2013) 093505
  A. Mogilatenko, S. Hagedorn, E. Richter, U. Zeimer, D. Goran, M. Weyers, G. Tränkle
  (See online at https://doi.org/10.1063/1.4794098)
• „HVPE growth of thick Al0.45Ga0.55N layers on trench patterned sapphire substrates”, Phys. Stat. Sol. C 10 (2013) 355
  S. Hagedorn, E. Richter, U. Zeimer, M. Weyers
  
• “Hydride Vapor-Phase Epitaxy of c -Plane AlGaN Layers on Patterned Sapphire Substrates”, J. Electron. Mat. 43 (2014) 814
  E. Richter, S. Fleischmann, D. Goran, S. Hagedorn, W. John, A. Mogilatenko, D. Prasai, U. Zeimer, M. Weyers, G. Tränkle
  (See online at https://doi.org/10.1007/s11664-013-2871-x)